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| 2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4299 900 800 7 3(Pulse6) 1.5 70(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) 2SC4299 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=-0.3A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 Unit A 23.00.3 V 9.50.2 A a b MHz pF 1.75 2.15 1.05 5.450.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.5 ton (s) 1max tstg (s) 5max tf (s) 1max 5.450.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 3 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (IC/IB=5) IC - V BE Temperature Characteristics (Typical) 3 (VCE=4V) 500mA 400mA 300mA 1 p) -55C (Case Tem 25C (Cas e Temp) Temp) V B E( sat) Collector Current I C (A) Collector Current I C (A) 200mA 2 2 mp) 2 5 Cas eT C emp) (Cas 125C 125C -55 C ( V C E( sat) 0 0.02 0.05 0.1 0.5 1 12 5C 0 0 1 2 3 4 3 0 0 0.2 0.4 0.6 0.8 -55C (C 1 I B =50mA 1 25C (C ase Tem ase Te (Case e Te p) 100mA mp) 1.0 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 125C DC C urrent G ain h FE 25C 8 j- a( C/W) hFE - I C Characteristics (Typical) ton*t s t g*t f ( s) ton*t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 3 5 tstg VCC 250V IC:IB1:-IB2 =2:0.3:1 Const. 1 0.5 ton 0.2 0.1 0.5 1 3 Transient Thermal Resistance -55C Sw it ching Time 1 tf 10 0.5 5 0.01 0.05 0.1 0.5 1 3 0.3 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 10 10 Reverse Bias Safe Operating Area 70 P c - T a Derating 10 0 s Ma xim um Powe r Dissipat io n P C( W) 5 5 60 W Collector Cur rent I C( A) Collecto r Cur rent I C( A) 50 ith In fin ite 40 he 1 1 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% at si nk 30 0.5 Without Heatsink Natural Cooling 0.5 20 10 Without Heatsink 3.5 0 0.1 50 100 500 1000 0.1 50 100 500 1000 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 97 |
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